Apparatus and methods for power amplifiers

ABSTRACT

Apparatus and methods for power amplifiers are disclosed. In one embodiment, a power amplifier circuit assembly includes a power amplifier and an impedance matching network. The impedance matching network is operatively associated with the power amplifier and is configured to provide a load line impedance to the power amplifier between about 6 Ω and about 10 Ω. The impedance matching network includes a fundamental matching circuit and one or more termination circuits, and the fundamental matching circuit and each of the of the one or more termination circuits include separate input terminals for coupling to an output of the power amplifier so as to allow the fundamental matching circuit and each of the one or more termination circuits to be separately tuned.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority under 35 U.S.C. §119(e)of U.S. Provisional Patent Application No. 61/555,754, filed Nov. 4,2011 entitled “APPARATUS AND METHODS FOR POWER AMPLIFIERS”, which isherein incorporated by reference in its entirety.

BACKGROUND

1. Field

Embodiments of the invention relate to electronic systems, and inparticular, to power amplifiers for radio frequency (RF) electronics.

2. Description of the Related Technology

Power amplifiers can be included in mobile devices to amplify a RFsignal for transmission via an antenna. For example, in mobile deviceshaving a time division multiple access (TDMA) architecture, such asthose found in Global System for Mobile Communications (GSM), codedivision multiple access (CDMA), and wideband code division multipleaccess (W-CDMA) systems, a power amplifier can be used to amplify a RFsignal having a relatively low power. It can be important to manage theamplification of a RF signal, as a desired transmit power level candepend on how far the user is away from a base station and/or the mobileenvironment. Power amplifiers can also be employed to aid in regulatingthe power level of the RF signal over time, so as to prevent signalinterference from transmission during an assigned receive time slot.

The power consumption of a power amplifier can be an importantconsideration. One technique for reducing power consumption of a poweramplifier is envelope tracking, in which the voltage level of the powersupply of the power amplifier is controlled in relation to the envelopeof the RF signal. Thus, when the envelope of the RF signal increases,the voltage supplied to the power amplifier can be increased. Likewise,when the envelope of the RF signal decreases, the voltage supplied tothe power amplifier can be decreased to reduce power consumption.

There is a need for improved power amplifier systems. Furthermore, thereis a need for power amplifiers having improved power efficiency.

SUMMARY

In certain embodiments, the present disclosure relates to a poweramplifier circuit assembly including a power amplifier and an impedancematching network operatively associated with the power amplifier. Thepower amplifier includes an input configured to receive a radiofrequency signal having a fundamental frequency and an output configuredto generate an amplified radio frequency signal. The impedance matchingnetwork is configured to provide a load line impedance between about 6 Ωand about 10 Ω at the fundamental frequency. The impedance matchingnetwork includes a fundamental matching circuit and one or moretermination circuits, and the fundamental matching circuit and each ofthe of the one or more termination circuits include separate inputterminals for coupling to the output of the power amplifier so as toallow the fundamental matching circuit and each of the one or moretermination circuits to be separately tuned.

In various embodiments, the one or more termination circuits include asecond harmonic termination circuit and a third harmonic terminationcircuit.

In various embodiments, the power amplifier circuit assembly furtherincludes an envelope tracker configured to generate a power supplyvoltage for the power amplifier. In certain embodiments, the poweramplifier circuit assembly further includes a bias network for supplyingthe power amplifier with the power supply voltage, and the bias networkincludes a choke inductor electrically connected between the envelopetracker and the power amplifier and a bypass capacitor electricallyconnected between the power supply voltage and a ground node. In someembodiments, the bypass capacitor has a capacitance in the range ofabout 50 pF to about 200 pF.

According to a number of embodiments, the power amplifier circuitassembly further includes an input bias circuit configured to generate abias current for the input of the power amplifier. The input biascircuit is configured to decrease a magnitude of the bias current when apower level of the amplified radio frequency signal decreases.

In certain embodiments, the present disclosure relates to a mobiledevice including a power amplifier having an input and an output, animpedance matching network operatively associated with the poweramplifier, an antenna electrically connected to the output of the poweramplifier through the impedance matching circuit, and an envelopetracker configured to generate a power supply voltage for the poweramplifier. The input of the power amplifier is configured to receive aradio frequency signal having a fundamental frequency and the output ofthe power amplifier is configured to generate an amplified radiofrequency signal. The impedance matching network is configured toprovide a load line impedance between about 6 Ω and about 10 Ω at thefundamental frequency, and the impedance matching network includes afundamental matching circuit and one or more termination circuits. Thefundamental matching circuit and each of the of the one or moretermination circuits include separate input terminals for coupling tothe output of the power amplifier so as to allow the fundamentalmatching circuit and each of the one or more termination circuits to beseparately tuned.

In various embodiments, the mobile device further includes a biasnetwork for supplying the power amplifier with the power supply voltage,and the bias network includes a choke inductor electrically connectedbetween the envelope tracker and the power amplifier and a bypasscapacitor electrically connected between the power supply voltage and aground node. In some embodiments, the bypass capacitor has a capacitancein the range of about 50 pF to about 200 pF.

According to a number of embodiments, the fundamental matching circuitand each of the one or more termination circuits are electricallyconnected to the power amplifier using different bond wires.

In various embodiments, the one or more termination circuits include asecond harmonic termination circuit and a third harmonic terminationcircuit.

According to several embodiments, the mobile device further includes atransceiver configured to generate the radio frequency input signal.

In some embodiments, the mobile device further includes an input biascircuit configured to generate a bias current for the input of the poweramplifier. The input bias circuit is configured to decrease a magnitudeof the bias current when a power level of the amplified radio frequencysignal decreases.

In certain embodiments, the present disclosure relates to a multi-chipmodule including a substrate, an input pin configured to receive a radiofrequency signal having a fundamental frequency, a power amplifier diemounted on the substrate, and an impedance matching network disposed onthe substrate. The power amplifier die includes an input electricallyconnected to the input pin and an output configured to generate anamplified radio frequency signal. The impedance matching network iselectrically connected to the output of the power amplifier, and theimpedance matching network includes an inductive circuit component and acapacitive circuit component configured to provide a load line impedancebetween about 6 Ω and about 10 Ω at the fundamental frequency. Theimpedance matching network further includes a fundamental matchingcircuit and one or more termination circuits, and the fundamentalmatching circuit and each of the of the one or more termination circuitsinclude separate input terminals for coupling to the output of the poweramplifier so as to allow the fundamental matching circuit and each ofthe one or more termination circuits to be separately tuned.

In various embodiments, the capacitive circuit component, is formed froma surface mount component mounted on the substrate.

In some embodiments, the inductive circuit component includes a spiralinductor formed from a conductive trace of the substrate.

In a number of embodiments, the inductive circuit component includes asurface mount component mounted to the substrate.

In according with several embodiments, the multi-chip module furtherincludes a power supply pin and a ground pin, and the power supply pinis configured to receive a power supply voltage from an envelopetracker. In various embodiments, the multi-chip module further includesa bias network for supplying the power amplifier with the power supplyvoltage, and the bias network includes a choke inductor electricallyconnected between the power supply pin and the power amplifier and abypass capacitor electrically connected between the power supply pin andthe ground pin. In some embodiments, the bypass capacitor has acapacitance in the range of about 50 pF to about 200 pF.

In various embodiments, the fundamental matching circuit and each of theone or more termination circuits are electrically connected to the poweramplifier die using different bond wires.

In according with certain embodiments, the fundamental matching circuitand each of the one or more termination circuits are electricallyconnected to the power amplifier die using different pads of the poweramplifier die.

In some embodiments, the multi-chip module further includes a poweramplifier bias die disposed on the substrate and configured to provide abias signal for controlling a quiescent current of the power amplifierdie.

In certain embodiments, the present disclosure relates to a tuningcircuit assembly for use in a power amplifier system. The tuning circuitassembly includes an impedance matching network operatively associatedwith a power amplifier and configured to provide a load line impedancebetween about 6 Ω and about 10 Ω. The impedance matching networkincludes a fundamental matching circuit and one or more terminationcircuits, and the fundamental matching circuit and each of the of theone or more termination circuits include separate terminals for couplingto an output of the power amplifier so as to allow the fundamentalmatching circuit and each of the one or more termination circuits to beseparately tuned. The tuning circuit assembly further includes a biasingnetwork operative associated with said impedance matching network. Thebiasing network is operatively associated with an envelope tracker andconfigured to provide a bypass capacitance in the range of about 50 pFto about 200 pF.

In various embodiments, the one or more termination circuits includes aplurality of termination circuits for even harmonics but does notinclude any termination circuits for odd harmonics.

In some embodiments, the one or more termination circuits include aplurality of termination circuits for odd harmonics but do not includeany termination circuits for even harmonics.

In certain embodiments, the one or more termination circuits include asecond harmonic termination circuit and a third harmonic terminationcircuit.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a power amplifier module for amplifyinga radio frequency (RF) signal.

FIG. 2 is a schematic block diagram of an example wireless device thatcan include one or more of the power amplifier modules of FIG. 1.

FIG. 3 is a schematic block diagram of one example of a power amplifiersystem including an envelope tracker.

FIGS. 4A and 4B show two examples of power supply voltage versus time.

FIG. 5 shows two examples of load line current versus voltage.

FIG. 6 is a schematic block diagram of another example of a poweramplifier system including an envelope tracker.

FIG. 7 is a schematic block diagram of one example of a multi-chipmodule (MCM).

FIG. 8 is a schematic block diagram of one example of a portion of aMCM.

FIG. 9 shows an example of output power versus bias current for oneexample of a power amplifier system.

DETAILED DESCRIPTION OF EMBODIMENTS

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.

Overview of Power Amplifier Systems

FIG. 1 is a schematic diagram of a power amplifier module 10 foramplifying a radio frequency (RF) signal. The illustrated poweramplifier module 10 can be configured to amplify an RF signal RF_IN togenerate an amplified RF signal RF_OUT. As described herein, the poweramplifier module 10 can include one or more power amplifiers.

FIG. 2 is a schematic block diagram of an example wireless device 11that can include one or more of the power amplifier modules 10 ofFIG. 1. The wireless device 11 can implement one or more features of thepresent disclosure.

The example wireless device 11 depicted in FIG. 2 can represent amulti-band and/or multi-mode device such as a multi-band/multi-modemobile phone. By way of examples, Global System for Mobile (GSM)communication standard is a mode of digital cellular communication thatis utilized in many parts of the world. GSM mode mobile phones canoperate at one or more of four frequency bands: 850 MHz (approximately824-849 MHz for Tx, 869-894 MHz for Rx), 900 MHz (approximately 880-915MHz for Tx, 925-960 MHz for Rx), 1800 MHz (approximately 1710-1785 MHzfor Tx, 1805-1880 MHz for Rx), and 1900 MHz (approximately 1850-1910 MHzfor Tx, 1930-1990 MHz for Rx). Variations and/or regional/nationalimplementations of the GSM bands are also utilized in different parts ofthe world.

Code division multiple access (CDMA) is another standard that can beimplemented in mobile phone devices. In certain implementations, CDMAdevices can operate in one or more of 800 MHz, 900 MHz, 1800 MHz and1900 MHz bands, while certain W-CDMA and Long Term Evolution (LTE)devices can operate over, for example, about 22 radio frequency spectrumbands.

One or more features of the present disclosure can be implemented in theforegoing example modes and/or bands, and in other communicationstandards. For example, 3G, 4G, LTE, and Advanced LTE are non-limitingexamples of such standards.

In certain embodiments, the wireless device 11 can include switches 12,a transceiver 13, an antenna 14, power amplifiers 17, a controlcomponent 18, a computer readable medium 19, a processor 20, a battery21, and a supply control block 22.

The transceiver 13 can generate RF signals for transmission via theantenna 14. Furthermore, the transceiver 13 can receive incoming RFsignals from the antenna 14.

It will be understood that various functionalities associated with thetransmission and receiving of RF signals can be achieved by one or morecomponents that are collectively represented in FIG. 2 as thetransceiver 13. For example, a single component can be configured toprovide both transmitting and receiving functionalities. In anotherexample, transmitting and receiving functionalities can be provided byseparate components.

Similarly, it will be understood that various antenna functionalitiesassociated with the transmission and receiving of RF signals can beachieved by one or more components that are collectively represented inFIG. 2 as the antenna 14. For example, a single antenna can beconfigured to provide both transmitting and receiving functionalities.In another example, transmitting and receiving functionalities can beprovided by separate antennas. In yet another example, different bandsassociated with the wireless device 11 can be provided with differentantennas.

In FIG. 2, one or more output signals from the transceiver 13 aredepicted as being provided to the antenna 14 via one or moretransmission paths 15. In the example shown, different transmissionpaths 15 can represent output paths associated with different bandsand/or different power outputs. For instance, the two example poweramplifiers 17 shown can represent amplifications associated withdifferent power output configurations (e.g., low power output and highpower output), and/or amplifications associated with different bands.Although FIG. 2 illustrates the wireless device 11 as including twotransmission paths 15, the wireless device 11 can be adapted to includemore or fewer transmission paths 15.

In FIG. 2, one or more detected signals from the antenna 14 are depictedas being provided to the transceiver 13 via one or more receiving paths16. In the example shown, different receiving paths 16 can representpaths associated with different bands. For example, the four examplepaths 16 shown can represent quad-band capability that some wirelessdevices are provided with. Although FIG. 2 illustrates the wirelessdevice 11 as including four receiving paths 16, the wireless device 11can be adapted to include more or fewer receiving paths 16.

To facilitate switching between receive and transmit paths, the switches12 can be configured to electrically connect the antenna 14 to aselected transmit or receive path. Thus, the switches 12 can provide anumber of switching functionalities associated with operation of thewireless device 11. In certain embodiments, the switches 12 can includea number of switches configured to provide functionalities associatedwith, for example, switching between different bands, switching betweendifferent power modes, switching between transmission and receivingmodes, or some combination thereof. The switches 12 can also beconfigured to provide additional functionality, including filteringand/or duplexing of signals.

FIG. 2 shows that in certain embodiments, a control component 18 can beprovided for controlling various control functionalities associated withoperations of the switches 12, the power amplifiers 17, the supplycontrol block 22, and/or other operating components.

In certain embodiments, a processor 20 can be configured to facilitateimplementation of various processes described herein. For the purpose ofdescription, embodiments of the present disclosure may also be describedwith reference to flowchart illustrations and/or block diagrams ofmethods, apparatus (systems) and computer program products. It will beunderstood that each block of the flowchart illustrations and/or blockdiagrams, and combinations of blocks in the flowchart illustrationsand/or block diagrams, may be implemented by computer programinstructions. These computer program instructions may be provided to aprocessor of a general purpose computer, special purpose computer, orother programmable data processing apparatus to produce a machine, suchthat the instructions, which execute via the processor of the computeror other programmable data processing apparatus, create means forimplementing the acts specified in the flowchart and/or block diagramblock or blocks.

In certain embodiments, these computer program instructions may also bestored in a computer-readable memory 19 that can direct a computer orother programmable data processing apparatus to operate in a particularmanner, such that the instructions stored in the computer-readablememory produce an article of manufacture including instruction meanswhich implement the acts specified in the flowchart and/or block diagramblock or blocks. The computer program instructions may also be loadedonto a computer or other programmable data processing apparatus to causea series of operations to be performed on the computer or otherprogrammable apparatus to produce a computer implemented process suchthat the instructions that execute on the computer or other programmableapparatus provide steps for implementing the acts specified in theflowchart and/or block diagram block or blocks.

The illustrated wireless device 11 also includes the supply controlblock 22, which can be used to provide a power supply voltage to one ormore of the power amplifiers 17. For example, the supply control block22 can include an envelope tracker configured to control or vary thevoltage level of the supply voltage provided to the power amplifiers 17based upon an envelope of the RF signal to be amplified. However, incertain implementations the supply control block 22 can includedifferent components.

The supply control block 22 can be electrically connected to the battery21, and the supply control block 22 can be configured to generate thesupply voltage for the power amplifiers 17. The battery 21 can be anysuitable battery for use in the wireless device 11, including, forexample, a lithium-ion battery. As will be described in detail furtherbelow, by varying the voltage provided to the power amplifiers, thepower consumed from the battery 21 can be reduced, thereby improvingperformance of the battery life of the wireless device 11. In certainimplementations, the supply control block 22 can control the poweramplifier supply voltage based on an envelope of the RF signal to beamplified. The envelope signal can be provided to the supply controlblock 22 from the transceiver 13. However, the envelope can bedetermined in other ways. For example, the envelope can be determined bydetecting the envelope from the RF signal using any suitable envelopedetector.

FIG. 3 is a schematic block diagram of one example of a power amplifiersystem 25 including an envelope tracker 30. The illustrated poweramplifier system 25 includes the switches 12, the antenna 14, theenvelope tracker 30, an impedance matching network 31, a power amplifier32, and a bias network 35. The impedance matching network 31 includes aninductive circuit component 33 and a capacitive circuit component 34,and the bias network 35 includes a decoupling or bypass capacitor 36 andan inductor 37.

The illustrated envelope tracker 30 is configured to receive an envelopeof the RF signal and to generate a power amplifier supply voltage V_(CC)_(—) _(PA) for the power amplifier 32 that changes in relation to theenvelope signal over time. In some implementations the power amplifiersupply voltage V_(CC) _(—) _(PA) can have a minimum voltage in the rangeof about 0.5 V to about 0.7 V, and a maximum voltage in the range ofabout 5 V to about 5.5 V. Thus, in contrast to a conventional poweramplifier system that can have a fixed voltage of, for example, about3.4 V, the power amplifier system 25 can have a power amplifier supplyvoltage V_(CC) _(—) _(PA) that dynamically changes in relation to theenvelope of the RF signal.

The illustrated power amplifier 32 includes a bipolar transistor 39having an emitter, a base, and a collector. The emitter of the bipolartransistor 39 can be electrically connected to a first supply voltageV₁, which can be, for example, a ground node. Additionally, a radiofrequency (RF) signal can be provided to the base of the bipolartransistor 39 such that the bipolar transistor 39 amplifies the RFsignal and provides the amplified RF signal at the collector. Thebipolar transistor 39 can be any suitable device. In one implementation,the bipolar transistor 39 is a heterojunction bipolar transistor (HBT).

The power amplifier 32 can be configured to provide the amplified RFsignal to the switches 12. The impedance matching network 31 can be usedto terminate the electrical connection between the power amplifier 32and the switches 12. For example, the impedance matching network 31 canbe used to increase power transfer and/or reduce reflections of theamplified RF signal generated using the power amplifier 32. Theimpedance matching network 31 includes the inductive component 33 andthe capacitive component 34, which can be configured to achieve adesired impedance characteristic versus frequency.

The bias network 35 can be included to aid in biasing the poweramplifier 32 with the power amplifier supply voltage V_(CC) _(—) _(PA)generated by the envelope tracker 30. The inductor 37 can include afirst end electrically connected to the envelope tracker 30 and a secondend electrically connected to the collector of the bipolar transistor39. The inductor 37 can be used to provide the power amplifier supplyvoltage V_(CC) _(—) _(PA) to the power amplifier 32 while choking orblocking high frequency RF signal components. The decoupling capacitor36 includes a first end electrically connected to the first end of theinductor 37 and a second end electrically coupled to the first supplyvoltage V₁. The decoupling capacitor 36 can provide a low impedance pathto high frequency signals, thereby reducing the noise of the poweramplifier supply voltage V_(CC) _(—) _(PA), improving power amplifierstability, and/or improving the performance of the inductor 37 as a RFchoke. In certain implementations described herein, the decouplingcapacitor 36 can be configured to have a relatively small capacitancerelative to a conventional power amplifier decoupling capacitor.

Although FIG. 3 illustrates one implementation of the power amplifier32, skilled artisans will appreciate that the teachings described hereincan be applied to a variety of power amplifier structures, such asmulti-stage power amplifier structures and power amplifiers employingother transistor structures. For example, in some implementations thebipolar transistor 39 can be omitted in favor of employing afield-effect transistor (FET), such as a silicon FET, a gallium arsenide(GaAs) high electron mobility transistor (HEMT), or a laterally diffusedmetal oxide semiconductor (LDMOS) transistor.

FIGS. 4A and 4B show two examples of power supply voltage versus time.

In FIG. 4A, a graph 47 illustrates the voltage of an RF signal 41 and apower amplifier supply voltage 43 versus time. The RF signal 41 has anenvelope 42.

It can be important that the power supply voltage 43 of a poweramplifier has a voltage greater than that of the RF signal 41. Forexample, providing a power supply voltage to a power amplifier having amagnitude less than that of the RF signal 41 can clip the RF signal,thereby creating signal distortion and/or other problems. Thus, it canbe important the power supply voltage 43 be greater than that of theenvelope 42. However, it can be desirable to reduce a difference involtage between the power amplifier supply voltage 43 and the envelope42 of the RF signal 41, as the area between the power amplifier supplyvoltage 43 and the envelope 42 can represent lost energy, which canreduce battery life and increase heat generated in a mobile device.

In FIG. 4B, a graph 48 illustrates the voltage of an RF signal 41 and apower amplifier supply voltage 44 versus time. In contrast to the poweramplifier supply voltage 43 of FIG. 4A, the power amplifier supplyvoltage 44 of FIG. 4B varies in relation to the envelope 42 of the RFsignal 41. The area between the power amplifier supply voltage 44 andthe envelope 42 in FIG. 4B is less than the area between the poweramplifier supply voltage 43 and the envelope 42 in FIG. 4A, and thus thegraph 48 of FIG. 4B can be associated with a power amplifier systemhaving greater energy efficiency.

FIG. 5 shows two examples of load line current versus voltage. The graph60 can represent a current versus voltage relationship of an impedancematching network at a given frequency, such as a fundamental frequencyof an amplified RF signal generated by a power amplifier.

Power added efficiency (PAE) is one metric for rating a power amplifier,and can correspond to the ratio of the difference between the output andinput signal power to the DC power consumed by the power amplifier.Linearity is another metric for rating a power amplifier, and can berated in a variety of ways including, for example, by measuring adjacentchannel power ratio (ACPR) and/or by determining an input signal powerlevel that causes a small-signal gain of the power amplifier to drop byabout 1 dB. PAE and/or linearity can be metrics by which customersdetermine which power amplifiers to purchase, as PAE can impact batterylife of an electronic device and linearity can impact signal quality ofthe electronic device. Although high PAE and high linearity aredesirable, improving PAE can come at the cost of reducing linearity,while increasing linearity can cause a decrease in PAE.

A load line electrically connected to an output of a power amplifier canimpact PAE and linearity of the power amplifier. For example, increasingthe impedance of the load line can increase the PAE of the poweramplifier and reduce the linearity of the power amplifier, whiledecreasing the impedance of the load line can increase the linearity ofthe power amplifier and reduce the PAE of the power amplifier.

The graph 60 includes a first plot 61 of load line current versusvoltage and a second plot 62 of load line current versus voltage. Asshown in FIG. 5, the first plot 61 has a relatively sharper or steeperslope than the second plot 62, and thus the first plot 61 is associatedwith an impedance matching network having lower load line impedance thanan impedance matching network associated with the second plot 62. Forexample, the first plot 61 can be associated with a load line impedanceof about 4 Ω, while the second plot 62 can be associated with a loadline impedance of about 8 Ω. The first plot 61 also has a higher currentfor a given voltage than the second plot 61, and thus the first plot 61can be associated with a power amplifier having a lower PAE than a poweramplifier associated with the second plot 62.

In certain implementations described herein, a power amplifier systemincludes an impedance matching network tuned to have a relatively highload line impedance at a fundamental frequency of an RF signal amplifiedby the power amplifier system relative to that of a conventional poweramplifier system. For example, in some implementations the impedancematching network is configured to have a load impedance at thefundamental frequency that is in the range of about 6 Ω to about 10 Ω,for example, about 8 Ω. By increasing the load line impedance of thepower amplifier, the current draw of the power amplifier can be reduced,thereby by improving power efficiency.

Although increasing the load line impedance of the power amplifier canreduce linearity of the power amplifier, the power amplifier system canbe configured to meet or exceed a linearity rating by including anenvelope tracker for controlling a supply voltage of the poweramplifier. For example, the envelope tracker can not only improve powerefficiency by controlling supply voltage in relation to an envelopesignal as was described above with reference to FIG. 4B, but theenvelope tracker can also improve the linearity of the power amplifiersystem by controlling the voltage of the power amplifier output inrelation to the envelope signal. For instance, since the envelopetracker changes the DC voltage of the power amplifier output based on alow frequency component of the RF signal, the envelope tracker canimprove the linearity of the power amplifier by changing the voltage ofthe power amplifier output at the envelope frequency.

FIG. 6 is a schematic block diagram of another example of a poweramplifier system 70 including an envelope tracker 30. The illustratedpower amplifier system 70 includes the envelope tracker 30, the poweramplifier 32, an impedance matching network 71, a bias network 75, and apower amplifier input bias circuit 79. The impedance matching network 71includes a fundamental matching circuit 72 and a second harmonictermination circuit 74. The envelope tracker 30 is configured to receivean envelope of the RF signal and to generate a power amplifier supplyvoltage V_(CC) _(—) _(PA) for the power amplifier 32. The poweramplifier 32 is configured to receive a RF signal on the input terminalRF_IN and to generate an amplified RF signal on the output terminalRF_OUT.

The illustrated power amplifier 32 includes a bipolar transistor 39having an emitter, a base, and a collector. The emitter of the bipolartransistor 39 can be electrically connected to a first supply voltageV₁, which can be, for example, a ground node. Additionally, the base ofthe bipolar transistor 39 is electrically connected to the inputterminal RF_IN, which can be used to provide a RF signal to the poweramplifier 32. Additionally, the base of the bipolar transistor 39 isconfigured to receive a bias current I_(BIAS) from the power amplifierinput bias circuit 79. The output of the power amplifier 32 iselectrically connected to the output terminal RF_OUT through theimpedance matching network 71. For example, the collector of the bipolartransistor 39 is electrically connected to the second harmonictermination circuit 74 and to the fundamental matching circuit 72. Thebipolar transistor 39 can be used to amplify a RF signal received on theinput terminal RF_IN and to generate an amplifier version of the RFsignal on the output terminal RF_OUT. Although the power amplifier 32 isillustrated as including the bipolar transistor 39, in someimplementations the bipolar transistor 39 can be omitted in favor ofusing a field-effect transistor (FET).

The impedance matching network 71 can be used to aid in terminating theelectrical connection between the power amplifier 32 and the outputterminal RF_OUT. The impedance matching network 71 can be configured tohave relatively high load line impedance at the fundamental frequencyrelative to conventional power amplifier systems. For example, incertain implementations, the impedance matching network 71 can beconfigured to have an impedance at the RF signal's fundamental frequencythat is in the range of about 6 Ω to about 10 Ω, for example, about 8 Ω.

The fundamental matching circuit 72 includes a first inductor 81 and afirst capacitor 82, which can be used to control the load line impedanceof the power amplifier 32. For example, the first inductor 81 and thefirst capacitor 82 can have values selected to achieve a desired loadline impedance of the power amplifier 32 at the fundamental frequency.The fundamental matching circuit 72 can be used to provide an impedancetransformation so as to provide a desired load impedance for the poweramplifier 32 when an antenna or other load is electrically connected tothe output terminal RF_OUT.

The second harmonic termination circuit 74 includes a second inductor 83and a second capacitor 84. The second harmonic termination circuit 74can be tuned to provide a desired impedance at about twice thefundamental frequency of the RF signal amplified by the power amplifier32. For example, the second inductor 83 and the second capacitor 84 canbe configured to have a relatively low impedance, such as an impedanceof less than about 0.5 Ω at about twice the fundamental frequency so asto substantially eliminate second-order harmonic signal components fromthe amplified RF signal generated on the output terminal RF_OUT.

Although FIG. 6 illustrates an implementation in which the impedancematching network 71 includes the fundamental matching circuit 72 and thesecond harmonic termination circuit 74, the teachings herein areapplicable to other configurations of the impedance matching network 71.For example, in some implementations the impedance matching network 71includes a plurality of harmonic termination circuits, such as harmonictermination circuits for second order, third order, and/or fourth orhigher order terms.

As will be described in detail further below with reference to FIG. 8,in one embodiment separate connections are provided between the poweramplifier 32 and the fundamental matching circuit 72 and between thepower amplifier 32 and each of the harmonic termination circuits. Bysplitting the load line of the power amplifier 32 in this manner, theoverall power efficiency of the power amplifier 32 can be increased byallowing the fundamental matching circuit 72 and each of the harmonictermination circuits to be separately tuned.

The bias network 75 can be included to bias the power amplifier 32 withthe power amplifier supply voltage V_(CC) _(—) _(PA) generated by theenvelope tracker 30. The bias network 75 includes a choke inductor 85and a bypass capacitor 86. The choke inductor 85 can include a first endelectrically connected to the envelope tracker 30 and a second endelectrically connected to the collector of the bipolar transistor 39.The bypass capacitor 86 includes a first end electrically connected tothe first end of the choke inductor 85 and a second end electricallycoupled to the first supply voltage V₁. The bypass capacitor 86 can beconfigured to provide a low impedance path to high frequency signals.

Capacitive loading of the power amplifier supply voltage V_(CC) _(—)_(PA) can result in the envelope tracker 30 having a relatively largesize and/or reduced power efficiency. However, some capacitance may beneeded local to the power amplifier 32 to reduce noise, to providestability to the power amplifier 32, and/or to effectively operate theinductor 85 as a choke.

In certain implementations, the bypass capacitor 86 is selected to havea relatively small value relatively to a bypass capacitance used in aconventional power amplifier system. For example, in one embodiment thebypass capacitor 86 is selected to have a capacitance in the range ofabout 50 pF to about 200 pF, for example, about 100 pF. Accordingly, incontrast to conventional power amplifier systems that can employ abypass capacitor of a capacitance of 1 μF or more, in certainimplementations described herein power amplifier systems are providedwith relatively small bypass capacitors.

The power amplifier input bias circuit 79 can be used to provide a biascurrent to the power amplifier 32. For example, the power amplifierinput bias circuit 79 can be used to generate a bias current I_(BIAS)for the base of the bipolar transistor 39. Biasing the power amplifier32 with a relatively large bias current I_(BIAS) can increase thelinearity of the power amplifier 32, but can also reduce the PAE of thepower amplifier 32.

In certain implementations, the power amplifier input bias circuit 79can be configured to dynamically adjust the bias current of the poweramplifier 32 in relation to the output signal power level of the poweramplifier 32. For example, as will be described below with reference toFIG. 9, in one embodiment the power amplifier input bias circuit 79 canbe configured to decrease a magnitude of the bias current I_(BIAS) whenthe output signal power level of the power amplifier 32 decreases.

FIG. 7 is a schematic block diagram of one example of a multi-chipmodule (MCM) 90. The illustrated MCM 90 includes a MCM substrate 91, apower amplifier die 92, an impedance matching network 93, a bias network94, and a power amplifier bias die 95. The MCM 90 further includes apower supply pin V_(CC) _(—) _(PA), an input pin RF_IN, and an outputpin RF_OUT. In certain implementations, the power supply pin V_(CC) _(—)_(PA) can be electrically connected to an envelope tracker, such as anenvelope tracking module disposed on a phone board.

The power amplifier die 92 can be mounted on the MCM substrate 91, andcan include one or more power amplifiers for amplifying a RF signalreceived on the input pin RF_IN to generate an amplified RF signal onthe output pin RF_OUT. For example, the power amplifier die 92 can be agallium arsenide (GaAs) die including heterojunction bipolar transistors(HBT).

The impedance matching network 93 can be used to aid in terminating theelectrical connection between the power amplifier die 92 and the outputpin RF_OUT. The impedance matching network 93 can also be configured toachieve a desired load line impedance characteristic versus frequencyfor the power amplifier die 92, thereby impacting the efficiency of theMCM 90. The impedance matching network 93 can include an inductivecomponent and a capacitive component. The inductive component can beformed, for example, using trace disposed on the MCM substrate 91, usingone or more bond wires, and/or using one or more surface mountcomponents. The capacitive component can be formed, for example, usingone or more surface mount components. In some implementations, theimpedance matching network 93 is configured to have a load lineimpedance in the range of about 6 Ω to about 10 Ω, for example, about 8Ω.

The bias network 94 can be used to aid in biasing the power amplifierdie 92 with a power supply voltage received on the power supply pinV_(CC) _(—) _(PA), as was described earlier. In certain implementationsthe bias network 94 includes an inductor formed using trace disposed onthe MCM substrate 91 of the MCM 90. Although the bias network 94 caninclude an inductor from trace, the bias network 94 can include aninductor formed in other ways, such as by use of one or more surfacemount components and/or by use of one or more bond wires. The biasnetwork 94 can also include a capacitor for decoupling the power supplyvoltage from the power supply pin V_(CC) _(—) _(PA), such as a capacitorformed using one or more surface mount components.

The power amplifier bias die 95 can be mounted on the MCM substrate 91,and can be used, for example, to enable and disable one or more poweramplifiers disposed on the power amplifier die 92 and/or to provide biassignals to the power amplifier die 92. For example, in a bipolartransistor configuration, the power amplifier bias die 95 can be used toprovide a reference voltage for biasing a current mirror used togenerate a base current for the power amplifiers. Accordingly, the poweramplifier bias die 95 can be used to generate a bias signal forcontrolling a quiescent current of the power amplifier die 92.

Although FIG. 7 illustrates a configuration in which the MCM 90 includesthe power supply pin V_(CC) _(—) _(PA) for receiving a power supplyvoltage from an envelope tracker, in other configurations an envelopetracking die can be mounted on the MCM substrate 91.

FIG. 8 is a schematic block diagram of one example of a portion of a MCM100. The MCM 100 includes a MCM substrate 101, a power amplifier die102, a first trace 104 a, a second trace 104 b, a third trace 104 c, afundamental matching circuit 105, a second harmonic termination circuit107 a, an Nth harmonic termination circuit 107 b, a first bond wire 108a, a second bond wire 108 b, and a third bond wire 108 c. The poweramplifier die 102 includes a first pad 103 a, a second pad 103 b, and athird pad 103 c, which can be electrically connected to a common nodewithin the power amplifier die 102. For example, in a bipolar transistorconfiguration, the first pad 103 a, the second pad 103 b, and the thirdpad 103 c can each be electrically connected to a collector of a bipolartransistor.

The output signal of a power amplifier can include a fundamentalfrequency component and one or more harmonic frequency components. Someconventional power amplifier systems have included a single terminationcircuit to provide impedance matching at a fundamental frequency of thepower amplifier output signal and to terminate one or more harmonicfrequencies of the power amplifier output signal.

However, it can be difficult to tune the single termination circuit toboth provide impedance matching at the fundamental frequency of thepower amplifier output signal and to terminate the harmonic frequenciesof the power amplifier output signal in a way that optimizes both PAEand linearity. For example, since a bond wire can have an inductancethat impacts the impedance of a termination circuit, using a bond wireto connect to the single termination circuit can result in it beingdifficult or impossible to optimally tune the single termination circuitfor fundamental and harmonic frequencies.

In the configuration illustrated in FIG. 8, the power amplifier die 102includes separate fundamental matching and harmonic terminationcircuits. For example, the power amplifier die 102 includes the firstpad 103 a and the first bond wire 108 a for electrically connecting tothe first trace 104 a and to the fundamental matching circuit 105, whichcan be configured to provide signal termination at a fundamentalfrequency. Additionally, the power amplifier die 102 includes the secondpad 103 b and the second bond wire 108 b for electrically connecting tothe second trace 104 b and to the second harmonic termination circuit107 a, and the third pad 103 c and the third bond wire 108 c forelectrically connecting to the third trace 104 c and to the Nth harmonictermination circuit 107 b.

Although the first, second and third pads 108 a-108 c can beelectrically connected to one another and to the output of a poweramplifier within the power amplifier die 102, each of the first, secondand third pads 108 a-108 c can include separate bond wires forconnecting to separate matching circuits on the MCM substrate 101.Providing separate fundamental matching and harmonic terminationcircuits for the power amplifier die 102 can improve the PAE and/orlinearity of the power amplifier die 102 by allowing circuit elements ofthe fundamental matching and harmonic termination circuits to beseparately tuned for optimization.

Although FIG. 8 illustrates a configuration including two harmonictermination circuits 107 a, 107 b, more or fewer harmonic terminationcircuits can be included in the MCM 100. For example, in someimplementations the MCM 100 includes separate circuits for fundamentalfrequency matching and for second harmonic termination, while in otherimplementations the MCM 100 includes separate circuits for each offundamental frequency matching, second harmonic termination and thirdharmonic termination.

In one embodiment, the MCM 100 includes separate harmonic terminationcircuits for even or odd harmonic frequencies while providing noharmonic termination for the other of the even or odd harmonicfrequencies. For example, in a class F configuration, the MCM 100 caninclude separate circuits for fundamental frequency matching and forterminating at least one even harmonic frequency, while providing noharmonic termination for odd harmonic frequencies. Additionally, in aninverted class F configuration, the MCM 100 can include separatecircuits for fundamental frequency matching and for terminating at leastone odd harmonic frequency, while providing no harmonic termination foreven harmonic frequencies.

Although FIG. 8 illustrates a configuration in which the fundamentalmatching circuit and the harmonic termination circuits are connected toseparate pads of the IC, in certain implementations, the fundamentalmatching circuit and the harmonic termination circuits can beelectrically connected to a single pin or pad of the die using differentbond wires.

FIG. 9 shows an example of output power versus bias current for oneexample of a power amplifier system. The graph 120 of output powerversus bias current can represent an example of the magnitude of thebias current I_(BIAS) of the power amplifier input bias circuit 79 ofFIG. 6 versus output power of the RF signal RF_OUT of FIG. 6.

As illustrated in the graph 120 of FIG. 9, the bias current can decreaseas the output power P_(OUT) decreases. In certain configurations, thelinearity of a power amplifier system with an envelope tracker canincrease at low output power levels. Accordingly, the bias currentI_(BIAS) of the power amplifier system can be decreased at low outputpower levels to increase power efficiency while maintaining a linearityabove a threshold, such as a threshold associated with a linearityrating of the power amplifier system.

Applications

Some of the embodiments described above have provided examples inconnection with mobile phones. However, the principles and advantages ofthe embodiments can be used for any other systems or apparatus that haveneeds for power amplifier systems.

Such power amplifier systems can be implemented in various electronicdevices. Examples of the electronic devices can include, but are notlimited to, consumer electronic products, parts of the consumerelectronic products, electronic test equipment, etc. Examples of theelectronic devices can also include, but are not limited to, memorychips, memory modules, circuits of optical networks or othercommunication networks, and disk driver circuits. The consumerelectronic products can include, but are not limited to, a mobile phone,a telephone, a television, a computer monitor, a computer, a hand-heldcomputer, a personal digital assistant (PDA), a microwave, arefrigerator, an automobile, a stereo system, a cassette recorder orplayer, a DVD player, a CD player, a VCR, an MP3 player, a radio, acamcorder, a camera, a digital camera, a portable memory chip, a washer,a dryer, a washer/dryer, a copier, a facsimile machine, a scanner, amulti functional peripheral device, a wrist watch, a clock, etc.Further, the electronic devices can include unfinished products.

Conclusion

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Likewise, the word “connected”, as generally used herein, refers to twoor more elements that may be either directly connected, or connected byway of one or more intermediate elements. Additionally, the words“herein,” “above,” “below,” and words of similar import, when used inthis application, shall refer to this application as a whole and not toany particular portions of this application. Where the context permits,words in the above Detailed Description using the singular or pluralnumber may also include the plural or singular number respectively. Theword “or” in reference to a list of two or more items, that word coversall of the following interpretations of the word: any of the items inthe list, all of the items in the list, and any combination of the itemsin the list.

Moreover, conditional language used herein, such as, among others,“can,” “could,” “might,” “can,” “e.g.,” “for example,” “such as” and thelike, unless specifically stated otherwise, or otherwise understoodwithin the context as used, is generally intended to convey that certainembodiments include, while other embodiments do not include, certainfeatures, elements and/or states. Thus, such conditional language is notgenerally intended to imply that features, elements and/or states are inany way required for one or more embodiments or that one or moreembodiments necessarily include logic for deciding, with or withoutauthor input or prompting, whether these features, elements and/orstates are included or are to be performed in any particular embodiment.

The above detailed description of embodiments of the invention is notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example, whileprocesses or blocks are presented in a given order, alternativeembodiments may perform routines having steps, or employ systems havingblocks, in a different order, and some processes or blocks may bedeleted, moved, added, subdivided, combined, and/or modified. Each ofthese processes or blocks may be implemented in a variety of differentways. Also, while processes or blocks are at times shown as beingperformed in series, these processes or blocks may instead be performedin parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to othersystems, not necessarily the system described above. The elements andacts of the various embodiments described above can be combined toprovide further embodiments.

While certain embodiments of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms; furthermore, various omissions, substitutions and changes in theform of the methods and systems described herein may be made withoutdeparting from the spirit of the disclosure. The accompanying claims andtheir equivalents are intended to cover such forms or modifications aswould fall within the scope and spirit of the disclosure.

What is claimed is:
 1. A power amplifier circuit assembly comprising: apower amplifier including an input and an output, the input configuredto receive a radio frequency signal having a fundamental frequency andthe output configured to generate an amplified radio frequency signal;and an impedance matching network operatively associated with the poweramplifier and configured to provide a load line impedance between about6 Ω and about 10 Ω at the fundamental frequency, the impedance matchingnetwork including a fundamental matching circuit and one or moretermination circuits, the fundamental matching circuit and each of theof the one or more termination circuits including separate inputterminals for coupling to the output of the power amplifier so as toallow the fundamental matching circuit and each of the one or moretermination circuits to be separately tuned.
 2. The power amplifiercircuit assembly of claim 1 wherein the one or more termination circuitsincludes a second harmonic termination circuit and a third harmonictermination circuit.
 3. The power amplifier circuit assembly of claim 1further comprising an envelope tracker configured to generate a powersupply voltage for the power amplifier.
 4. The power amplifier circuitassembly of claim 3 further comprising a bias network for supplying thepower amplifier with the power supply voltage, the bias networkincluding a choke inductor electrically connected between the envelopetracker and the power amplifier and a bypass capacitor electricallyconnected between the power supply voltage and a ground node.
 5. Thepower amplifier circuit assembly of claim 4 wherein the bypass capacitorhas a capacitance in the range of about 50 pF to about 200 pF.
 6. Thepower amplifier circuit assembly of claim 1 further comprising an inputbias circuit configured to generate a bias current for the input of thepower amplifier, the input bias circuit configured to decrease amagnitude of the bias current when a power level of the amplified radiofrequency signal decreases.
 7. A mobile device comprising: a poweramplifier including an input and an output, the input configured toreceive a radio frequency signal having a fundamental frequency and theoutput configured to generate an amplified radio frequency signal; animpedance matching network operatively associated with the poweramplifier and configured to provide a load line impedance between about6 Ω and about 10 Ω at the fundamental frequency, the impedance matchingnetwork including a fundamental matching circuit and one or moretermination circuits, the fundamental matching circuit and each of theof the one or more termination circuits including separate inputterminals for coupling to the output of the power amplifier so as toallow the fundamental matching circuit and each of the one or moretermination circuits to be separately tuned; an antenna electricallyconnected to the output of the power amplifier through the impedancematching circuit; and an envelope tracker configured to generate a powersupply voltage for the power amplifier.
 8. The mobile device of claim 7further comprising a bias network for supplying the power amplifier withthe power supply voltage, the bias network including a choke inductorelectrically connected between the envelope tracker and the poweramplifier and a bypass capacitor electrically connected between thepower supply voltage and a ground node.
 9. The mobile device of claim 8wherein the bypass capacitor has a capacitance in the range of about 50pF to about 200 pF.
 10. The mobile device of claim 7 wherein thefundamental matching circuit and each of the one or more terminationcircuits are electrically connected to the power amplifier usingdifferent bond wires.
 11. The mobile device of claim 7 wherein the oneor more termination circuits includes a second harmonic terminationcircuit and a third harmonic termination circuit.
 12. The mobile deviceof claim 7 further comprising a transceiver configured to generate theradio frequency input signal.
 13. The mobile device of claim 7 furthercomprising an input bias circuit configured to generate a bias currentfor the input of the power amplifier, the input bias circuit configuredto decrease a magnitude of the bias current when a power level of theamplified radio frequency signal decreases.
 14. A multi-chip modulecomprising: a substrate; an input pin configured to receive a radiofrequency signal having a fundamental frequency; a power amplifier diemounted on the substrate, the power amplifier die including an inputelectrically connected to the input pin and an output configured togenerate an amplified radio frequency signal; and an impedance matchingnetwork disposed on the substrate and electrically connected to theoutput of the power amplifier, the impedance matching network includingan inductive circuit component and a capacitive circuit componentconfigured to provide a load line impedance between about 6 Ω and about10 Ω at the fundamental frequency, the impedance matching networkfurther including a fundamental matching circuit and one or moretermination circuits, the fundamental matching circuit and each of theof the one or more termination circuits including separate inputterminals for coupling to the output of the power amplifier so as toallow the fundamental matching circuit and each of the one or moretermination circuits to be separately tuned.
 15. The multi-chip moduleof claim 14 wherein the capacitive circuit component is formed from asurface mount component mounted on the substrate.
 16. The multi-chipmodule of claim 14 wherein the inductive circuit component includes aspiral inductor formed from a conductive trace of the substrate.
 17. Themulti-chip module of claim 14 wherein the inductive circuit componentincludes a surface mount component mounted to the substrate.
 18. Themulti-chip module of claim 14 further comprising a power supply pin anda ground pin, the power supply pin configured to receive a power supplyvoltage from an envelope tracker.
 19. The multi-chip module of claim 18further comprising a bias network for supplying the power amplifier withthe power supply voltage, the bias network including a choke inductorelectrically connected between the power supply pin and the poweramplifier and a bypass capacitor electrically connected between thepower supply pin and the ground pin.
 20. The multi-chip module of claim19 wherein the bypass capacitor has a capacitance in the range of about50 pF to about 200 pF.
 21. The multi-chip module of claim 14 wherein thefundamental matching circuit and each of the one or more terminationcircuits are electrically connected to the power amplifier die usingdifferent bond wires.
 22. The multi-chip module of claim 21 wherein thefundamental matching circuit and each of the one or more terminationcircuits are electrically connected to the power amplifier die usingdifferent pads of the power amplifier die.
 23. The multi-chip module ofclaim 14 further comprising a power amplifier bias die disposed on thesubstrate and configured to provide a bias signal for controlling aquiescent current of the power amplifier die.
 24. A tuning circuitassembly for use in a power amplifier system, the tuning circuitassembly comprising: an impedance matching network operativelyassociated with a power amplifier and configured to provide a load lineimpedance between about 6 Ω and about 10 Ω, the impedance matchingnetwork including a fundamental matching circuit and one or moretermination circuits, the fundamental matching circuit and each of theof the one or more termination circuits including separate terminals forcoupling to an output of the power amplifier so as to allow thefundamental matching circuit and each of the one or more terminationcircuits to be separately tuned; and a biasing network operativeassociated with said impedance matching network, the biasing networkoperatively associated with an envelope tracker and configured toprovide a bypass capacitance in the range of about 50 pF to about 200pF.
 25. The tuning circuit assembly of claim 24 wherein the one or moretermination circuits include a plurality of termination circuits foreven harmonics but do not include any termination circuits for oddharmonics.
 26. The tuning circuit assembly of claim 24 wherein the oneor more termination circuits include a plurality of termination circuitsfor odd harmonics but do not include any termination circuits for evenharmonics.
 27. The tuning circuit assembly of claim 24 wherein the oneor more termination circuits include a second harmonic terminationcircuit and a third harmonic termination circuit.